- 专利标题: Contact structures in semiconductor devices
-
申请号: US17818918申请日: 2022-08-10
-
公开(公告)号: US12040372B2公开(公告)日: 2024-07-16
- 发明人: Hsu-Kai Chang , Jhih-Rong Huang , Yen-Tien Tung , Chia-Hung Chu , Shuen-Shin Liang , Tzer-Min Shen , Pinyen Lin , Sung-Li Wang
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Tawian Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Tawian Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号: H01L29/45
- IPC分类号: H01L29/45 ; H01L21/285 ; H01L21/8238 ; H01L27/092 ; H01L29/08 ; H01L29/417 ; H01L29/66 ; H01L29/78
摘要:
A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second gate structures disposed on first and second fin structures, first and second source/drain (S/D) regions disposed on the first and second fin structures, first and second contact structures disposed on the first and second S/D regions, and a dipole layer disposed at an interface between the first nWFM silicide layer and the first S/D region. The first contact structure includes a first nWFM silicide layer disposed on the first S/D region and a first contact plug disposed on the first nWFM silicide layer. The second contact structure includes a pWFM silicide layer disposed on the second S/D region, a second nWFM silicide layer disposed on the pWFM silicide layer, and a second contact plug disposed on the pWFM silicide layer.
公开/授权文献
- US20220384601A1 Contact Structures in Semiconductor Devices 公开/授权日:2022-12-01
信息查询
IPC分类: