公开(公告)号：US12040372B2

公开(公告)日：2024-07-16

申请号：US17818918

申请日：2022-08-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsu-Kai Chang ,  Jhih-Rong Huang ,  Yen-Tien Tung ,  Chia-Hung Chu ,  Shuen-Shin Liang ,  Tzer-Min Shen ,  Pinyen Lin ,  Sung-Li Wang

IPC分类号： H01L29/45 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/45 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7851

摘要： A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second gate structures disposed on first and second fin structures, first and second source/drain (S/D) regions disposed on the first and second fin structures, first and second contact structures disposed on the first and second S/D regions, and a dipole layer disposed at an interface between the first nWFM silicide layer and the first S/D region. The first contact structure includes a first nWFM silicide layer disposed on the first S/D region and a first contact plug disposed on the first nWFM silicide layer. The second contact structure includes a pWFM silicide layer disposed on the second S/D region, a second nWFM silicide layer disposed on the pWFM silicide layer, and a second contact plug disposed on the pWFM silicide layer.

公开(公告)号：US07169665B2

公开(公告)日：2007-01-30

申请号：US10838674

申请日：2004-05-04

申请人： Chuan Chang Lin ,  James Chiu

发明人： Chuan Chang Lin ,  James Chiu

IPC分类号： H01L21/8242

CPC分类号： H01L28/40 ,  H01L23/5223 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： In accordance with the objectives of the invention a new method and structure is provided for the creation of a capacitor. A contact pad and a lower capacitor plate have been provided over a substrate. Under the first embodiment of the invention, a layer of etch stop material, serving as the capacitor dielectric is deposited after which a triple layer of passivation is created over a substrate. The compound passivation layer is first etched, using a fuse mask, to define and expose the capacitor dielectric and a fuse area after which the passivation layer is second etched to define and expose the contact pad. A layer of AlCu is then deposited, patterned and etched to create a capacitor upper plate and a contact interconnect over the contact pad. Under a second embodiment of the invention, a triple layer of passivation is created over a layer of etch stop material deposited over a substrate, a contact pad and a lower capacitor plate have been provided over the substrate. The compound passivation layer is first etched to expose the lower capacitor plate. A layer of capacitor dielectric is deposited after which the passivation layer is second etched to expose the contact pad. A layer of AlCu is then deposited, patterned and etched to create an AlCu interconnect over the contact pad and a upper capacitor plate.

摘要翻译： 根据本发明的目的，提供了一种用于产生电容器的新方法和结构。 接触焊盘和下电容器板已经设置在基板上。 在本发明的第一实施例中，沉积用作电容器电介质的一层蚀刻停止材料，之后在衬底上形成三层钝化。 首先使用熔丝掩模蚀刻化合物钝化层以限定和暴露电容器电介质和熔融区域，之后第二蚀刻钝化层以限定和暴露接触焊盘。 然后沉积，图案化和蚀刻AlCu层，以在接触焊盘上形成电容器上板和接触互连。 在本发明的第二实施例中，在沉积在衬底上的蚀刻停止材料层上形成三层钝化，在衬底上提供接触焊盘和下电容器板。 首先蚀刻复合钝化层以暴露下电容器板。 沉积一层电容电介质，之后第二次蚀刻钝化层以露出接触垫。 然后沉积，图案化和蚀刻AlCu层，以在接触焊盘和上电容器板上产生AlCu互连。