- 专利标题： Nonvolatile memory devices and data storage systems including the same
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申请号： US17470644申请日： 2021-09-09
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公开(公告)号： US12057421B2公开(公告)日： 2024-08-06
- 发明人: Jaeho Ahn , Jiwon Kim , Sungmin Hwang , Joonsung Lim , Sukkang Sung
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Myers Bigel, P.A.
- 优先权： KR 20200165067 2020.11.30
- 主分类号： H01L25/065
- IPC分类号： H01L25/065 ; H01L23/00 ; H01L25/18
摘要：
A nonvolatile memory device and a data storage system including the same are provided. The nonvolatile memory device includes: a first structure including at least one first memory plane; and a second structure bonded to the first structure and including at least one second memory plane, wherein the number of the at least one first memory plane included in the first structure is different from the number of the at least one second memory plane included in the second structure.
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