- 专利标题: Substrate for epitaxial growth and method for producing same
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申请号: US17984371申请日: 2022-11-10
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公开(公告)号: US12070923B2公开(公告)日: 2024-08-27
- 发明人: Teppei Kurokawa , Yusuke Hashimoto , Hironao Okayama
- 申请人: Toyo Kohan Co., Ltd. , Sumitomo Electric Industries, Ltd.
- 申请人地址: JP Tokyo
- 专利权人: TOYO KOHAN CO., LTD.,SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人: TOYO KOHAN CO., LTD.,SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址: JP Tokyo; JP Osaka
- 代理机构: McCarter & English, LLP
- 优先权: JP 15209074 2015.10.23
- 分案原申请号: US15768902
- 主分类号: B32B15/01
- IPC分类号: B32B15/01 ; B23K20/02 ; B32B15/18 ; B32B15/20 ; C22F1/08 ; C30B1/02 ; C30B25/18 ; C30B29/02 ; H10N60/01
摘要:
It is an object to provide a substrate for epitaxial growth having a metal base material laminated with a copper layer. On a surface of the copper layer, an area occupied by crystal grains having crystal orientations other than a (200) plane present within 3 μm from the surface can be less than 1.5%. A surface roughness along a same direction as a rolling direction per unit length of 60 μm when measured by AFM can be Ra1
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