Invention Grant
- Patent Title: System and method for omnidirectional real time detection of photolithography characteristics
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Application No.: US17501848Application Date: 2021-10-14
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Publication No.: US12078933B2Publication Date: 2024-09-03
- Inventor: Tai-Yu Chen , Shang-Chieh Chien , Sheng-Kang Yu , Li-Jui Chen , Heng-Hsin Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G06N20/00

Abstract:
An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.
Public/Granted literature
- US20220269182A1 SYSTEM AND METHOD FOR OMNIDIRECTIONAL REAL TIME DETECTION OF PHOTOLITHOGRAPHY CHARACTERISTICS Public/Granted day:2022-08-25
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