Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing
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Application No.: US17994841Application Date: 2022-11-28
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Publication No.: US12080563B2Publication Date: 2024-09-03
- Inventor: Chien-Hsun Chen , Yu-Min Liang , Yen-Ping Wang , Jiun Yi Wu , Chen-Hua Yu , Kai-Chiang Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/56 ; H01L21/683 ; H01L21/768 ; H01L23/00 ; H01L23/31 ; H01L23/48 ; H01L23/498 ; H01L23/522 ; H01L23/538

Abstract:
Interconnect devices, packaged semiconductor devices and methods are disclosed herein that are directed towards embedding a local silicon interconnect (LSI) device and through substrate vias (TSVs) into system on integrated substrate (SoIS) technology with a compact package structure. The LSI device may be embedded into SoIS technology with through substrate via integration to provide die-to-die FL connection arrangement for super large integrated Fan-Out (InFO) for SBT technology in a SoIS device. Furthermore, the TSV connection layer may be formed using lithographic or photoresist-defined vias to provide eLSI P/G out to a ball-grid-array (BGA) connection interface.
Public/Granted literature
- US20230091737A1 Semiconductor Devices and Methods of Manufacturing Public/Granted day:2023-03-23
Information query
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