Invention Grant
- Patent Title: Display device and semiconductor device
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Application No.: US17987887Application Date: 2022-11-16
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Publication No.: US12085823B2Publication Date: 2024-09-10
- Inventor: Toshihide Jinnai , Hajime Watakabe , Akihiro Hanada , Ryo Onodera , Isao Suzumura
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: JAPAN DISPLAY INC.
- Current Assignee: JAPAN DISPLAY INC.
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- Priority: JP 19027237 2019.02.19
- Main IPC: G02F1/1362
- IPC: G02F1/1362 ; G02F1/1368 ; H01L27/12 ; H01L29/786 ; H10K59/131

Abstract:
A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.
Public/Granted literature
- US20230074655A1 DISPLAY DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2023-03-09
Information query
IPC分类: