A plasma processing apparatus includes a chamber; a substrate support disposed in the chamber and including a lower electrode; an upper electrode disposed above the substrate support; an RF source that supplies an RF power to the lower electrode or the upper electrode, the RF power having a plurality of power levels during a first sequence in a repeating time period, the plurality of power levels including a first power level during a first state and a second state, and a second power level during a third state and a fourth state; and a DC source that applies a DC voltage to the lower electrode, the DC voltage having a plurality of voltage levels during the first sequence in the repeating time period.