公开(公告)号：US11984303B2

公开(公告)日：2024-05-14

申请号：US17189858

申请日：2021-03-02

Applicant: Tokyo Electron Limited

Inventor： Gen Tamamushi

IPC: H01J37/32 ,  H02N13/00

CPC classification number: H01J37/32715 ,  H01J37/32642 ,  H01J37/32733 ,  H01J37/32862 ,  H02N13/00 ,  H01J2237/2007 ,  H01J2237/334

Abstract: A first electrostatic chuck of a substrate support of the disclosed plasma processing apparatus has first and second electrodes and holds an edge ring. A second electrostatic chuck of the substrate support holds a substrate. The first electrode extends closer to the second electrostatic chuck than the second electrode. During plasma processing, a first voltage having a positive polarity is applied to the first and second electrodes. In a first period after the plasma processing, a second voltage having a negative polarity is applied to the first and second electrodes. In a second period after the first period, a third voltage having a positive polarity is applied to the first electrode, and a fourth voltage having a negative polarity is applied to the second electrode. The absolute value of the third voltage is smaller than the absolute value of the first voltage and the absolute value of the second voltage.

公开(公告)号：US10943766B2

公开(公告)日：2021-03-09

申请号：US16016990

申请日：2018-06-25

Applicant: Tokyo Electron Limited

Inventor： Shunichi Ito ,  Shinji Himori ,  Etsuji Ito ,  Naokazu Furuya ,  Gen Tamamushi

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: A power feed member having high heat insulation and capable of transmitting a power at a low loss is provided. The power feed member configured to supply a power includes a first conductive member; a second conductive member; and a connecting member configured to electrically connect the first conductive member and the second conductive member. At least a part of the connecting member is formed of a porous metal or multiple bulk metals.

公开(公告)号：US12087591B2

公开(公告)日：2024-09-10

申请号：US17707537

申请日：2022-03-29

Applicant: Tokyo Electron Limited

Inventor： Gen Tamamushi ,  Kazuya Nagaseki

IPC: H01L21/3065 ,  H01J37/30 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3213 ,  H01J37/305 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/3007 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32935 ,  H01L21/30621 ,  H01L21/32136 ,  H01J37/3053 ,  H01J2237/3341 ,  H01L21/67069 ,  H01L21/67253

Abstract: A plasma processing apparatus includes a chamber; a substrate support disposed in the chamber and including a lower electrode; an upper electrode disposed above the substrate support; an RF source that supplies an RF power to the lower electrode or the upper electrode, the RF power having a plurality of power levels during a first sequence in a repeating time period, the plurality of power levels including a first power level during a first state and a second state, and a second power level during a third state and a fourth state; and a DC source that applies a DC voltage to the lower electrode, the DC voltage having a plurality of voltage levels during the first sequence in the repeating time period.

公开(公告)号：US11315793B2

公开(公告)日：2022-04-26

申请号：US16674461

申请日：2019-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Gen Tamamushi ,  Kazuya Nagaseki

IPC: H01L21/306 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/3213 ,  H01J37/30 ,  H01L21/67 ,  H01J37/305

Abstract: An etching method is performed in a state where a substrate is placed on a substrate support provided in a chamber of a plasma processing apparatus. In the etching method, radio-frequency power is supplied to generate plasma from a gas in the chamber. Subsequently, a negative DC voltage is applied to a lower electrode of the substrate support during the supplying of the radio-frequency power to etch the substrate with positive ions from plasma. Subsequently, the applying of the negative DC voltage to the lower electrode and the supplying of the radio-frequency power are stopped to generate negative ions. Subsequently, a positive DC voltage is applied to the lower electrode in a state where the supply of the radio-frequency power is stopped to supply the negative ions to the substrate.

公开(公告)号：US11227773B2

公开(公告)日：2022-01-18

申请号：US16741875

申请日：2020-01-14

Applicant: Tokyo Electron Limited

Inventor： Gen Tamamushi

IPC: H01L21/306 ,  H01L21/3065 ,  H01J37/32 ,  B08B7/00

Abstract: A method for controlling an electrostatic attractor, which attracts an electrode to a gas plate provided in an upper portion of a plasma processing apparatus, includes, among a plasma generation period in which plasma is generated by the plasma processing apparatus and an idle period in which no plasma is generated by the plasma processing apparatus, applying voltages having polarities different from each other to first and second electrodes of the electrostatic attractor in at least the idle period.

公开(公告)号：US12057294B2

公开(公告)日：2024-08-06

申请号：US17123130

申请日：2020-12-16

Applicant: Tokyo Electron Limited

Inventor： Chishio Koshimizu ,  Gen Tamamushi ,  Masahiro Inoue

IPC: C23C16/00 ,  H01J37/32 ,  H01L21/306

CPC classification number: H01J37/32155 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32715

Abstract: An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.

公开(公告)号：US20220223427A1

公开(公告)日：2022-07-14

申请号：US17707537

申请日：2022-03-29

Applicant: Tokyo Electron Limited

Inventor： Gen Tamamushi ,  Kazuya Nagaseki

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/3213 ,  H01J37/30 ,  H01L21/306

Abstract: A plasma processing apparatus includes a chamber; a substrate support disposed in the chamber and including a lower electrode; an upper electrode disposed above the substrate support; an RF source that supplies an RF power to the lower electrode or the upper electrode, the RF power having a plurality of power levels during a first sequence in a repeating time period, the plurality of power levels including a first power level during a first state and a second state, and a second power level during a third state and a fourth state; and a DC source that applies a DC voltage to the lower electrode, the DC voltage having a plurality of voltage levels during the first sequence in the repeating time period.

公开(公告)号：US10886135B2

公开(公告)日：2021-01-05

申请号：US16183945

申请日：2018-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji Kubota ,  Kazuya Nagaseki ,  Akihiro Yokota ,  Gen Tamamushi

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  H01L21/311

Abstract: In a substrate processing method, electrons having a first energy are supplied from an electron beam generator into an inner space of a chamber body of a substrate processing apparatus to generate negative ions by attaching the electrons to molecules in a processing gas supplied to the inner space. Then a positive bias voltage is applied to an electrode of a supporting table that supports a substrate mounted on thereon in the inner space to attract the negative ions to the substrate.

公开(公告)号：US12125679B2

公开(公告)日：2024-10-22

申请号：US17951579

申请日：2022-09-23

Applicant: Tokyo Electron Limited

Inventor： Chishio Koshimizu ,  Gen Tamamushi ,  Masahiro Inoue ,  Yuto Kosaka ,  Shoichiro Matsuyama

IPC: H01J37/00 ,  H01J37/32

CPC classification number: H01J37/32211 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/3244

Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.

公开(公告)号：US11443924B2

公开(公告)日：2022-09-13

申请号：US16738369

申请日：2020-01-09

Applicant: Tokyo Electron Limited

Inventor： Gen Tamamushi ,  Kazuya Nagaseki ,  Chishio Koshimizu

IPC: H01J37/32

Abstract: An upper electrode for a plasma processing apparatus, includes an electrode having a gas discharge hole, a gas plate having a gas flow path formed at a position facing the gas discharge hole to supply a processing gas to the gas discharge hole, an electrostatic attraction part interposed between the electrode and the gas plate and having a contact surface that is in contact with a lower surface of the gas plate and an attraction surface that attracts an upper surface of the electrode, and a shield that shields radicals or gas moving from the gas discharge hole to a gap between the electrode and the gas plate.