Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing semiconductor devices
-
Application No.: US17662263Application Date: 2022-05-06
-
Publication No.: US12087760B2Publication Date: 2024-09-10
- Inventor: Derrick Johnson , Yupeng Chen , Ralph N. Wall , Mark Griswold
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Scottsdale
- Agent Kevin B. Jackson
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/092

Abstract:
In an example, a semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor region of the first conductivity type over the semiconductor substrate. A well region of a second conductivity type is in the semiconductor region. A doped region of the first conductivity type is in the well region. A doped region of the second conductivity type is in the well region. A doped region of the second conductivity type is in the semiconductor substrate at a bottom side. A doped region of the first conductivity type is in the semiconductor substrate at the bottom side. A first conductor is at a top side of the semiconductor region and a second conductor is at the bottom side. In some examples, one or more of doped regions at the bottom side is a patterned doped region.
Public/Granted literature
- US20230361107A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES Public/Granted day:2023-11-09
Information query
IPC分类: