公开(公告)号：US12284834B2

公开(公告)日：2025-04-22

申请号：US18777737

申请日：2024-07-19

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Derrick Johnson ,  Yupeng Chen ,  Ralph N. Wall ,  Mark Griswold

IPC: H10D89/60 ,  H10D84/85

Abstract: In an example, a semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor region of the first conductivity type over the semiconductor substrate. A well region of a second conductivity type is in the semiconductor region. A doped region of the first conductivity type is in the well region. A doped region of the second conductivity type is in the well region. A doped region of the second conductivity type is in the semiconductor substrate at a bottom side. A doped region of the first conductivity type is in the semiconductor substrate at the bottom side. A first conductor is at a top side of the semiconductor region and a second conductor is at the bottom side. In some examples, one or more of doped regions at the bottom side is a patterned doped region.

公开(公告)号：US12087760B2

公开(公告)日：2024-09-10

申请号：US17662263

申请日：2022-05-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Derrick Johnson ,  Yupeng Chen ,  Ralph N. Wall ,  Mark Griswold

IPC: H01L27/02 ,  H01L27/092

CPC classification number: H01L27/0262 ,  H01L27/0928

Abstract: In an example, a semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor region of the first conductivity type over the semiconductor substrate. A well region of a second conductivity type is in the semiconductor region. A doped region of the first conductivity type is in the well region. A doped region of the second conductivity type is in the well region. A doped region of the second conductivity type is in the semiconductor substrate at a bottom side. A doped region of the first conductivity type is in the semiconductor substrate at the bottom side. A first conductor is at a top side of the semiconductor region and a second conductor is at the bottom side. In some examples, one or more of doped regions at the bottom side is a patterned doped region.