Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US18079054Application Date: 2022-12-12
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Publication No.: US12094805B2Publication Date: 2024-09-17
- Inventor: Yasuhito Yoshimizu , Yoshiro Shimojo , Shinya Arai
- Applicant: Kioxia Corporation
- Applicant Address: JP Minato-ku
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 17046172 2017.03.10
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/768 ; H01L23/48 ; H01L23/522 ; H10B41/27 ; H10B43/10 ; H10B43/27

Abstract:
According to one embodiment, a stacked body includes a plurality of electrode layers stacked with an insulator interposed. A conductive via pierces the stacked body, and connects an upper layer interconnect and a lower layer interconnect. A insulating film is provided between the via and the stacked body. A distance along a diametral direction of the via between a side surface of the via and an end surface of one of the electrode layers opposing the side surface of the via is greater than a distance along the diametral direction between the side surface of the via and an end surface of the insulator opposing the side surface of the via.
Public/Granted literature
- US20230114433A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2023-04-13
Information query
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