- 专利标题: Semiconductor memory system
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申请号: US18203693申请日: 2023-05-31
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公开(公告)号: US12094866B2公开(公告)日: 2024-09-17
- 发明人: Hayato Masubuchi , Naoki Kimura , Manabu Matsumoto , Toyota Morimoto
- 申请人: Kioxia Corporation
- 申请人地址: JP Minato-ku
- 专利权人: Kioxia Corporation
- 当前专利权人: Kioxia Corporation
- 当前专利权人地址: JP Minato-ku
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP 11058140 2011.03.16
- 主分类号: G11C5/02
- IPC分类号: G11C5/02 ; H01L23/00 ; H01L23/31 ; H01L23/498 ; H01L23/528 ; H01L23/552 ; H01L25/00 ; H01L25/065 ; H01L25/18 ; H05K1/02 ; H05K1/18 ; H05K3/30 ; H10B69/00
摘要:
According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.
公开/授权文献
- US20230307433A1 SEMICONDUCTOR MEMORY SYSTEM 公开/授权日:2023-09-28
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