Invention Grant
- Patent Title: Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
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Application No.: US18376014Application Date: 2023-10-03
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Publication No.: US12094936B2Publication Date: 2024-09-17
- Inventor: Fu Tang , Peng-Fu Hsu , Michael Eugene Givens , Qi Xie
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- The original application number of the division: US16194041 2018.11.16
- Main IPC: H01L29/40
- IPC: H01L29/40 ; C23C16/40 ; H01L21/02 ; H01L21/28 ; H01L29/161 ; H01L29/51 ; H01L29/66 ; H01L29/78
Abstract:
Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.
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