Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US18115913Application Date: 2023-03-01
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Publication No.: US12100735B2Publication Date: 2024-09-24
- Inventor: Namkyu Edward Cho , Seung Soo Hong , Geum Jung Seong , Seung Hun Lee , Jeong Yun Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Fish & Richardson P.C.
- Priority: KR 20180029753 2018.03.14
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02 ; H01L21/306 ; H01L21/311 ; H01L21/8238 ; H01L27/02 ; H01L27/092 ; H01L29/08 ; H01L29/165 ; H01L29/78 ; H10B10/00

Abstract:
A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.
Public/Granted literature
- US20230207628A1 SEMICONDUCTOR DEVICES Public/Granted day:2023-06-29
Information query
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