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公开(公告)号：US11508751B2
公开(公告)日：2022-11-22
申请号：US17144458
申请日：2021-01-08
发明人： Namkyu Edward Cho , Seok Hoon Kim , Myung Il Kang , Geo Myung Shin , Seung Hun Lee , Jeong Yun Lee , Min Hee Choi , Jeong Min Choi
IPC分类号： H01L29/66 , H01L29/78 , H01L27/11582 , H01L21/768
摘要： A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.
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公开(公告)号：US12100735B2
公开(公告)日：2024-09-24
申请号：US18115913
申请日：2023-03-01
IPC分类号： H01L29/06 , H01L21/02 , H01L21/306 , H01L21/311 , H01L21/8238 , H01L27/02 , H01L27/092 , H01L29/08 , H01L29/165 , H01L29/78 , H10B10/00
CPC分类号： H01L29/0847 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02636 , H01L21/30604 , H01L21/31111 , H01L21/823814 , H01L21/823821 , H01L21/823828 , H01L27/0207 , H01L27/0924 , H01L29/0649 , H01L29/0869 , H01L29/165 , H01L29/7848 , H10B10/12
摘要： A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.
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公开(公告)号：US11600698B2
公开(公告)日：2023-03-07
申请号：US17118888
申请日：2020-12-11
IPC分类号： H01L29/06 , H01L29/08 , H01L21/02 , H01L27/02 , H01L21/8238 , H01L21/311 , H01L21/306 , H01L27/11 , H01L29/165 , H01L29/78 , H01L27/092
摘要： A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.
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公开(公告)号：US20210098577A1
公开(公告)日：2021-04-01
申请号：US17118888
申请日：2020-12-11
IPC分类号： H01L29/08 , H01L21/02 , H01L29/06 , H01L27/02 , H01L21/8238 , H01L21/311 , H01L21/306 , H01L27/11 , H01L29/165 , H01L29/78 , H01L27/092
摘要： A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.
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公开(公告)号：US10930668B2
公开(公告)日：2021-02-23
申请号：US16272265
申请日：2019-02-11
发明人： Namkyu Edward Cho , Seok Hoon Kim , Myung Ii Kang , Geo Myung Shin , Seung Hun Lee , Jeong Yun Lee , Min Hee Choi , Jeong Min Choi
IPC分类号： H01L27/11582 , H01L29/66 , H01L29/78 , H01L21/768
摘要： A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.
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公开(公告)号：US10896957B2
公开(公告)日：2021-01-19
申请号：US15992401
申请日：2018-05-30
IPC分类号： H01L29/08 , H01L21/02 , H01L29/06 , H01L27/02 , H01L21/8238 , H01L21/311 , H01L21/306 , H01L27/11 , H01L29/165 , H01L29/78 , H01L27/092
摘要： A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.
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