Invention Grant
- Patent Title: Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures
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Application No.: US18059700Application Date: 2022-11-29
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Publication No.: US12100749B2Publication Date: 2024-09-24
- Inventor: Yunseong Lee , Sangwook Kim , Sanghyun Jo , Jinseong Heo , Hyangsook Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20190119088 2019.09.26
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/02 ; H01L29/78
Abstract:
A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.
Information query
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