Invention Grant
- Patent Title: Semiconductor device including chalcogen compound and semiconductor apparatus including the same
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Application No.: US18478776Application Date: 2023-09-29
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Publication No.: US12101942B2Publication Date: 2024-09-24
- Inventor: Wooyoung Yang , Bonwon Koo , Chungman Kim , Kwangmin Park , Hajun Sung , Dongho Ahn , Changseung Lee , Minwoo Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20200145526 2020.11.03 KR 20210001064 2021.01.05
- The original application number of the division: US17244212 2021.04.29
- Main IPC: H10B63/00
- IPC: H10B63/00 ; G11C13/00 ; H10B61/00 ; H10N50/01 ; H10N50/80 ; H10N70/00 ; H10N70/20

Abstract:
A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).
Public/Granted literature
- US20240032308A1 SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME Public/Granted day:2024-01-25
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