A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition

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