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公开(公告)号：US20240094622A1
公开(公告)日：2024-03-21
申请号：US18517796
申请日：2023-11-22
Applicant: AGC Inc.
Inventor： YUYA NAGATA , Daijiro Akagi , Kenichi Sasaki , Hiroaki Iwaoka
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains Ir as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2θ range of 35° to 45° to an average value of an intensity of the diffracted light in a 2θ range of 55° to 60° measured using an XRD method with a CuKα ray, upon being irradiated with the EUV light with an incident angle of θ, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.
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公开(公告)号：US12235574B2
公开(公告)日：2025-02-25
申请号：US18420846
申请日：2024-01-24
Applicant: AGC Inc.
Inventor： Yuya Nagata , Daijiro Akagi , Kenichi Sasaki , Hiroaki Iwaoka
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The substrate, the multilayer reflective film, the protection film, and the phase shift film are arranged in this order. The phase shift film is made of an Ir-based material containing Ir as a main component, and the protection film is made of a Rh-based material containing Rh as a main component.
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公开(公告)号：US12204240B2
公开(公告)日：2025-01-21
申请号：US18394787
申请日：2023-12-22
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Shunya Taki , Takuma Kato , Ichiro Ishikawa , Kenichi Sasaki
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
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Patent Agency Ranking
公开(公告)号：US11914284B2
公开(公告)日：2024-02-27
申请号：US18346563
申请日：2023-07-03
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Shunya Taki , Takuma Kato , Ichiro Ishikawa , Kenichi Sasaki
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
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公开(公告)号：US12216397B2
公开(公告)日：2025-02-04
申请号：US18380956
申请日：2023-10-17
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Hirotomo Kawahara , Toshiyuki Uno , Ichiro Ishikawa , Kenichi Sasaki
IPC: H01L21/033 , G03F1/24 , G03F1/32 , H01L21/02
Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
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公开(公告)号：US11822229B2
公开(公告)日：2023-11-21
申请号：US17382755
申请日：2021-07-22
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Hirotomo Kawahara , Toshiyuki Uno , Ichiro Ishikawa , Kenichi Sasaki
IPC: H01L21/033 , G03F1/24 , G03F1/32 , G03F1/26 , G03F1/52
CPC classification number: G03F1/24 , G03F1/32 , H01L21/0332 , H01L21/0337
Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
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公开(公告)号：US12105412B2
公开(公告)日：2024-10-01
申请号：US18444020
申请日：2024-02-16
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Hiroaki Iwaoka , Wataru Nishida , Ichiro Ishikawa , Kenichi Sasaki
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition
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公开(公告)号：US12001134B2
公开(公告)日：2024-06-04
申请号：US18517796
申请日：2023-11-22
Applicant: AGC Inc.
Inventor： Yuya Nagata , Daijiro Akagi , Kenichi Sasaki , Hiroaki Iwaoka
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains it as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2θrange of 35° to 45° to an average value of an intensity of the diffracted light in a 28 range of 55° to 60° measured using an XRD method with a CuKα ray, upon being irradiated with the EUV light with an incident angle of θ, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.
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