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公开(公告)号：US11829065B2
公开(公告)日：2023-11-28
申请号：US18193674
申请日：2023-03-31
Applicant: AGC Inc.
Inventor： Shunya Taki , Hiroaki Iwaoka , Daijiro Akagi , Ichiro Ishikawa
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of
0.625MP1+MP2≤1000.-
公开(公告)号：US12105412B2
公开(公告)日：2024-10-01
申请号：US18444020
申请日：2024-02-16
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Hiroaki Iwaoka , Wataru Nishida , Ichiro Ishikawa , Kenichi Sasaki
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition
k-
公开(公告)号：US12216397B2
公开(公告)日：2025-02-04
申请号：US18380956
申请日：2023-10-17
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Hirotomo Kawahara , Toshiyuki Uno , Ichiro Ishikawa , Kenichi Sasaki
IPC: H01L21/033 , G03F1/24 , G03F1/32 , H01L21/02
Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
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Patent Agency Ranking
公开(公告)号：US11822229B2
公开(公告)日：2023-11-21
申请号：US17382755
申请日：2021-07-22
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Hirotomo Kawahara , Toshiyuki Uno , Ichiro Ishikawa , Kenichi Sasaki
IPC: H01L21/033 , G03F1/24 , G03F1/32 , G03F1/26 , G03F1/52
CPC classification number: G03F1/24 , G03F1/32 , H01L21/0332 , H01L21/0337
Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
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公开(公告)号：US12222640B2
公开(公告)日：2025-02-11
申请号：US18382269
申请日：2023-10-20
Applicant: AGC Inc.
Inventor： Shunya Taki , Hiroaki Iwaoka , Daijiro Akagi , Ichiro Ishikawa
Abstract: A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1): 0.625MP1+MP2≤1000 (1).
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6.发明公开公开(公告)号：US20240045319A1
公开(公告)日：2024-02-08
申请号：US18380956
申请日：2023-10-17
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Hirotomo Kawahara , Toshiyuki Uno , Ichiro Ishikawa , Kenichi Sakaki
IPC: G03F1/24 , H01L21/033 , G03F1/32
CPC classification number: G03F1/24 , H01L21/0337 , H01L21/0332 , G03F1/32
Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
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公开(公告)号：US12204240B2
公开(公告)日：2025-01-21
申请号：US18394787
申请日：2023-12-22
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Shunya Taki , Takuma Kato , Ichiro Ishikawa , Kenichi Sasaki
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
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公开(公告)号：US11914284B2
公开(公告)日：2024-02-27
申请号：US18346563
申请日：2023-07-03
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Shunya Taki , Takuma Kato , Ichiro Ishikawa , Kenichi Sasaki
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
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