-
公开(公告)号：US12038685B2
公开(公告)日：2024-07-16
申请号：US18201705
申请日：2023-05-24
Applicant: AGC Inc.
Inventor： Hirotomo Kawahara , Hiroyoshi Tanabe , Toshiyuki Uno , Hiroshi Hanekawa , Daijiro Akagi
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
-
公开(公告)号：US20240094622A1
公开(公告)日：2024-03-21
申请号：US18517796
申请日：2023-11-22
Applicant: AGC Inc.
Inventor： YUYA NAGATA , Daijiro Akagi , Kenichi Sasaki , Hiroaki Iwaoka
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains Ir as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2θ range of 35° to 45° to an average value of an intensity of the diffracted light in a 2θ range of 55° to 60° measured using an XRD method with a CuKα ray, upon being irradiated with the EUV light with an incident angle of θ, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.
-
公开(公告)号：US11829065B2
公开(公告)日：2023-11-28
申请号：US18193674
申请日：2023-03-31
Applicant: AGC Inc.
Inventor： Shunya Taki , Hiroaki Iwaoka , Daijiro Akagi , Ichiro Ishikawa
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of
0.625MP1+MP2≤1000.-
公开(公告)号：US12105412B2
公开(公告)日：2024-10-01
申请号：US18444020
申请日：2024-02-16
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Hiroaki Iwaoka , Wataru Nishida , Ichiro Ishikawa , Kenichi Sasaki
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition
k-
公开(公告)号：US12001134B2
公开(公告)日：2024-06-04
申请号：US18517796
申请日：2023-11-22
Applicant: AGC Inc.
Inventor： Yuya Nagata , Daijiro Akagi , Kenichi Sasaki , Hiroaki Iwaoka
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains it as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2θrange of 35° to 45° to an average value of an intensity of the diffracted light in a 28 range of 55° to 60° measured using an XRD method with a CuKα ray, upon being irradiated with the EUV light with an incident angle of θ, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.
-
Patent Agency Ranking
公开(公告)号：US11698580B2
公开(公告)日：2023-07-11
申请号：US17235220
申请日：2021-04-20
Applicant: AGC Inc.
Inventor： Hirotomo Kawahara , Hiroyoshi Tanabe , Toshiyuki Uno , Hiroshi Hanekawa , Daijiro Akagi
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
-
公开(公告)号：US12216397B2
公开(公告)日：2025-02-04
申请号：US18380956
申请日：2023-10-17
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Hirotomo Kawahara , Toshiyuki Uno , Ichiro Ishikawa , Kenichi Sasaki
IPC: H01L21/033 , G03F1/24 , G03F1/32 , H01L21/02
Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
-
公开(公告)号：US12124164B2
公开(公告)日：2024-10-22
申请号：US18621502
申请日：2024-03-29
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Takuma Kato , Keishi Tsukiyama , Toshiyuki Uno , Hiroshi Hanekawa , Ryusuke Oishi , Sadatatsu Ikeda , Yukihiro Iwata , Chikako Hanzawa
Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.
-
公开(公告)号：US11822229B2
公开(公告)日：2023-11-21
申请号：US17382755
申请日：2021-07-22
Applicant: AGC Inc.
Inventor： Daijiro Akagi , Hirotomo Kawahara , Toshiyuki Uno , Ichiro Ishikawa , Kenichi Sasaki
IPC: H01L21/033 , G03F1/24 , G03F1/32 , G03F1/26 , G03F1/52
CPC classification number: G03F1/24 , G03F1/32 , H01L21/0332 , H01L21/0337
Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
-
公开(公告)号：US12298660B2
公开(公告)日：2025-05-13
申请号：US18596919
申请日：2024-03-06
Applicant: AGC INC.
Inventor： Hirotomo Kawahara , Daijiro Akagi , Hiroaki Iwaoka , Toshiyuki Uno , Michinori Suehara , Keishi Tsukiyama
Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
-
-
-
-
-
-
-
-
-
Search Results
18
records
(took 0.013 seconds)
