- 专利标题: Power control of a memory device in connected standby state
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申请号: US17133484申请日: 2020-12-23
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公开(公告)号: US12106818B2公开(公告)日: 2024-10-01
- 发明人: Aiswarya M. Pious , Raji James , Phani K. Alaparthi , George Vergis , Bill Nale , Konika Ganguly
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Compass IP Law PC
- 主分类号: G11C5/14
- IPC分类号: G11C5/14 ; G06F1/3225 ; G06F1/3228 ; G06F1/3234 ; G06F1/3296 ; G11C11/4074
摘要:
Examples described herein relate to a device that includes: a first power rail to provide a signal from a power source to a reference supply voltage pin of a memory controller; a second power rail to provide a signal from the power source to an output buffer pin of the memory controller and to an output buffer pin of a central processing unit (CPU). In some examples, the second power rail is separate from the first power rail, during a high power state, the power source is to supply a same voltage to each of the reference supply voltage pin, the output buffer pin of the memory controller, and the output buffer pin of the CPU, and during a connected standby state, the power source is to reduce voltage provided to the output buffer pin of the memory controller and the output buffer pin of the CPU using the second power rail and maintain a voltage provided to the reference supply voltage pin.
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