Invention Grant
- Patent Title: Heat transfer element, method for forming the same and semiconductor structure comprising the same
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Application No.: US17163217Application Date: 2021-01-29
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Publication No.: US12111114B2Publication Date: 2024-10-08
- Inventor: Hung-Hsien Huang , Shin-Luh Tarng , Ian Hu , Chien-Neng Liao , Jui-Cheng Yu , Po-Cheng Huang
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: FOLEY & LARDNER LLP
- Main IPC: F28D15/04
- IPC: F28D15/04 ; F28D15/02 ; F28F13/18
Abstract:
A heat transfer element, a method for manufacturing the same and a semiconductor structure including the same are provided. The heat transfer element includes a housing, a chamber, a dendritic layer and a working fluid. The chamber is defined by the housing. The dendritic layer is disposed on an inner surface of the housing. The working fluid is located within the chamber.
Public/Granted literature
- US20220243992A1 HEAT TRANSFER ELEMENT, METHOD FOR FORMING THE SAME AND SEMICONDUCTOR STRUCTURE COMPRISING THE SAME Public/Granted day:2022-08-04
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