- 专利标题： Semiconductor device and manufacturing method thereof
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申请号： US17350492申请日： 2021-06-17
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公开(公告)号： US12125878B2公开(公告)日： 2024-10-22
- 发明人: Tomonari Shioda , Yasunori Oshima , Taichi Iwasaki , Shota Yamagiwa , Hiroto Saito
- 申请人： Kioxia Corporation
- 申请人地址： JP Tokyo
- 专利权人： Kioxia Corporation
- 当前专利权人： Kioxia Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP 20152066 2020.09.10
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L27/12 ; H01L29/40 ; H01L29/417 ; H01L29/66 ; H01L29/78 ; H01L29/167 ; H01L29/45
摘要：
A semiconductor device in an embodiment includes a substrate and a transistor. The transistor includes a source layer, a drain layer, a gate insulation film, a gate electrode, a contact plug and a first epitaxial layer. The source layer and the drain layer are provided in surface regions of the substrate, and contain an impurity. The gate insulation film is provided on the substrate between the source layer and the drain layer. The gate electrode is provided on the gate insulation film. The contact plug is provided so as to protrude to the source layer or the drain layer downward of a surface of the substrate. The first epitaxial layer is provided between the contact plug and the source layer or drain layer, and contains both the impurity and carbon.
公开/授权文献
- US20220077286A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2022-03-10
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