公开(公告)号：US11075122B2

公开(公告)日：2021-07-27

申请号：US16811065

申请日：2020-03-06

Applicant: Kioxia Corporation

Inventor： Tomonari Shioda ,  Takashi Ishida

IPC: H01L21/8234 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11582

Abstract: A semiconductor device according to an embodiment includes: a semiconductor substrate including a first surface, a first contact part provided at a deeper level than the first surface, and a second contact part protruding up to a higher level than the first surface from the first contact part; a stacked body in which insulating layers and electrode layers are alternately stacked on the first surface; and a semiconductor film extending, on the second contact part, in the stacked body in a first direction perpendicular to the first surface. At an interface between the first contact part and the second contact part, a length of the first contact part in a second direction parallel to the first surface is larger than a length of the second contact part in the second direction.

公开(公告)号：US12125878B2

公开(公告)日：2024-10-22

申请号：US17350492

申请日：2021-06-17

Applicant: Kioxia Corporation

Inventor： Tomonari Shioda ,  Yasunori Oshima ,  Taichi Iwasaki ,  Shota Yamagiwa ,  Hiroto Saito

IPC: H01L29/08 ,  H01L27/12 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/167 ,  H01L29/45

CPC classification number: H01L29/0847 ,  H01L27/1207 ,  H01L29/401 ,  H01L29/41766 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/167 ,  H01L29/456

Abstract: A semiconductor device in an embodiment includes a substrate and a transistor. The transistor includes a source layer, a drain layer, a gate insulation film, a gate electrode, a contact plug and a first epitaxial layer. The source layer and the drain layer are provided in surface regions of the substrate, and contain an impurity. The gate insulation film is provided on the substrate between the source layer and the drain layer. The gate electrode is provided on the gate insulation film. The contact plug is provided so as to protrude to the source layer or the drain layer downward of a surface of the substrate. The first epitaxial layer is provided between the contact plug and the source layer or drain layer, and contains both the impurity and carbon.

公开(公告)号：US11955545B2

公开(公告)日：2024-04-09

申请号：US17665031

申请日：2022-02-04

Applicant: Kioxia Corporation

Inventor： Tomonari Shioda

IPC: H01L29/78 ,  H01L29/66 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L29/7827 ,  H01L29/66666 ,  H10B41/27 ,  H10B43/27

Abstract: In one embodiment, a semiconductor device includes a substrate, and a first semiconductor layer provided on the substrate and including a first crystal grain. The device further includes a first film provided on a surface of the first semiconductor layer. The device further includes a second semiconductor layer provided on a surface of the first film, provided on the surface of the first semiconductor layer via an opening in the first film, including a second crystal grain, and included in a memory cell. Furthermore, a grain size of the second crystal grain is larger than a maximum value of a width of the second semiconductor layer in the opening.