Invention Grant
- Patent Title: Flexible vapor chamber with shape memory material
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Application No.: US17561605Application Date: 2021-12-23
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Publication No.: US12146476B2Publication Date: 2024-11-19
- Inventor: Jeff Ku , Mark J. Gallina , Min Suet Lim , Jianfang Zhu
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Banner & Witcoff Ltd.
- Main IPC: H05K7/20
- IPC: H05K7/20 ; F03G7/06

Abstract:
Particular embodiments described herein provide for a flexible vapor chamber with shape memory material for an electronic device. In an example, the electronic device can include a flexible vapor chamber and shape memory material coupled to the shape memory material. When the shape memory material is activated, the shape memory material moves a portion of the flexible vapor chamber to a position that helps with heat dissipation of heat collected by the flexible vapor chamber.
Public/Granted literature
- US20220186716A1 FLEXIBLE VAPOR CHAMBER WITH SHAPE MEMORY MATERIAL Public/Granted day:2022-06-16
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