- Patent Title: Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubes
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Application No.: US18356636Application Date: 2023-07-21
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Publication No.: US12151213B2Publication Date: 2024-11-26
- Inventor: Tzu-Ang Chao , Gregory Michael Pitner , Tse-An Chen , Lain-Jong Li , Yu Chao Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B01D67/00 ; H01L29/06 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/786 ; H10K10/46 ; H10K10/84 ; H10K71/00 ; H10K71/12 ; H10K85/20
Abstract:
A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
Public/Granted literature
- US20230360913A1 Method of Manufacturing Semiconductor Devices Public/Granted day:2023-11-09
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