公开(公告)号：US20210358750A1

公开(公告)日：2021-11-18

申请号：US17071554

申请日：2020-10-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: H01L21/02 ,  H01L51/00 ,  H01L29/06

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduced the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US20220262635A1

公开(公告)日：2022-08-18

申请号：US17736505

申请日：2022-05-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: H01L21/02 ,  H01L29/06 ,  H01L51/00 ,  H01L29/78 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L51/05 ,  H01L51/56 ,  H01L51/10 ,  H01L29/786

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US20230360913A1

公开(公告)日：2023-11-09

申请号：US18356636

申请日：2023-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10K10/84 ,  H10K10/46 ,  H10K71/00 ,  H10K71/12 ,  H10K85/20

CPC classification number: H01L21/02606 ,  H01L29/0669 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66045 ,  H01L29/78 ,  H01L29/7845 ,  H01L29/786 ,  H10K10/84 ,  H10K10/472 ,  H10K10/481 ,  H10K10/484 ,  H10K10/491 ,  H10K71/00 ,  H10K71/12 ,  H10K85/221

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US11749528B2

公开(公告)日：2023-09-05

申请号：US17736505

申请日：2022-05-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10K10/84 ,  H10K10/46 ,  H10K71/00 ,  H10K71/12 ,  H10K85/20

CPC classification number: H01L21/02606 ,  H01L29/0669 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66045 ,  H01L29/78 ,  H01L29/786 ,  H01L29/7845 ,  H10K10/472 ,  H10K10/481 ,  H10K10/484 ,  H10K10/491 ,  H10K10/84 ,  H10K71/00 ,  H10K71/12 ,  H10K85/221

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US20240390861A1

公开(公告)日：2024-11-28

申请号：US18789443

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: B01D67/00 ,  H01L21/02 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10K10/46 ,  H10K10/84 ,  H10K71/00 ,  H10K71/12 ,  H10K85/20

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US12151213B2

公开(公告)日：2024-11-26

申请号：US18356636

申请日：2023-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: H01L21/02 ,  B01D67/00 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10K10/46 ,  H10K10/84 ,  H10K71/00 ,  H10K71/12 ,  H10K85/20

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US11342181B2

公开(公告)日：2022-05-24

申请号：US17071554

申请日：2020-10-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: H01L21/02 ,  H01L29/06 ,  H01L51/00 ,  H01L29/78 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L51/05 ,  H01L51/56 ,  H01L51/10 ,  H01L29/786

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.