Invention Grant
- Patent Title: Power semiconductor device and manufacturing method therefor
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Application No.: US17417677Application Date: 2019-12-23
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Publication No.: US12183818B2Publication Date: 2024-12-31
- Inventor: Weifeng Sun , Rongcheng Lou , Kui Xiao , Feng Lin , Jiaxing Wei , Sheng Li , Siyang Liu , Shengli Lu , Longxing Shi
- Applicant: SOUTHEAST UNIVERSITY , CSMC TECHNOLOGIES FAB2 CO., LTD.
- Applicant Address: CN Nanjing; CN Wuxi
- Assignee: SOUTHEAST UNIVERSITY,CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee: SOUTHEAST UNIVERSITY,CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee Address: CN Nanjing; CN Wuxi
- Agency: Dority & Manning, P.A.
- Priority: CN201811583692.1 20181224
- International Application: PCT/CN2019/127355 WO 20191223
- International Announcement: WO2020/135313 WO 20200702
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/04 ; H01L29/10 ; H01L29/16 ; H01L29/66
Abstract:
A power semiconductor device includes: a substrate; drain metal; a drift region; a base region; a gate structure; a first conductive type doped region contacting the base region on the side of the base region distant from the gate structure; a source region provided in the base region and between the first conductive type doped region and the gate structure; contact metal that is provided on the first conductive type doped region and forms a contact barrier having rectifying characteristics together with the first conductive type doped region below; and source metal wrapping the contact metal and contacting the source region.
Public/Granted literature
- US20220115532A1 POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2022-04-14
Information query
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