公开(公告)号：US12183818B2

公开(公告)日：2024-12-31

申请号：US17417677

申请日：2019-12-23

Applicant: SOUTHEAST UNIVERSITY ,  CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Weifeng Sun ,  Rongcheng Lou ,  Kui Xiao ,  Feng Lin ,  Jiaxing Wei ,  Sheng Li ,  Siyang Liu ,  Shengli Lu ,  Longxing Shi

IPC: H01L29/78 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66

Abstract: A power semiconductor device includes: a substrate; drain metal; a drift region; a base region; a gate structure; a first conductive type doped region contacting the base region on the side of the base region distant from the gate structure; a source region provided in the base region and between the first conductive type doped region and the gate structure; contact metal that is provided on the first conductive type doped region and forms a contact barrier having rectifying characteristics together with the first conductive type doped region below; and source metal wrapping the contact metal and contacting the source region.