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公开(公告)号:US12183818B2
公开(公告)日:2024-12-31
申请号:US17417677
申请日:2019-12-23
Applicant: SOUTHEAST UNIVERSITY , CSMC TECHNOLOGIES FAB2 CO., LTD.
Inventor: Weifeng Sun , Rongcheng Lou , Kui Xiao , Feng Lin , Jiaxing Wei , Sheng Li , Siyang Liu , Shengli Lu , Longxing Shi
Abstract: A power semiconductor device includes: a substrate; drain metal; a drift region; a base region; a gate structure; a first conductive type doped region contacting the base region on the side of the base region distant from the gate structure; a source region provided in the base region and between the first conductive type doped region and the gate structure; contact metal that is provided on the first conductive type doped region and forms a contact barrier having rectifying characteristics together with the first conductive type doped region below; and source metal wrapping the contact metal and contacting the source region.