Invention Grant
- Patent Title: Non-volatile memory device, storage device including the same, and operating method thereof
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Application No.: US17648311Application Date: 2022-01-19
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Publication No.: US12217802B2Publication Date: 2025-02-04
- Inventor: Jooyong Park , Sangwon Park , Dongjin Shin , Suchang Jeon , Seungyong Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2021-0083802 20210628
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/04 ; G11C16/08 ; G11C16/14 ; G11C16/20

Abstract:
A non-volatile memory device includes a meta area having a first region storing first initial data, and second regions storing second initial data, different from each other; a user area configured to store user data; an initialization register configured to store the first initial data or update the second initial data in whole or in part; and control logic configured to perform a read operation, a program operation, or an erase operation using the initial data stored in the initialization register.
Public/Granted literature
- US20220415408A1 NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND OPERATING METHOD THEREOF Public/Granted day:2022-12-29
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