公开(公告)号：US10607708B2

公开(公告)日：2020-03-31

申请号：US16539290

申请日：2019-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Chu Oh ,  Pilsang Yoon ,  Jun Jin Kong ,  Jisu Kim ,  Hong Rak Son ,  Jinbae Bang ,  Daeseok Byeon ,  Taehyun Song ,  Dongjin Shin ,  Dongsup Jin

IPC: G11C16/28 ,  G11C29/02 ,  G11C16/04 ,  G11C29/50 ,  G11C16/26 ,  G11C16/34 ,  G11C11/56 ,  G11C16/10

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

公开(公告)号：US11315651B1

公开(公告)日：2022-04-26

申请号：US17355825

申请日：2021-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bongkil Jung ,  Dongjin Shin ,  Manjae Yang ,  Byungsun Lee ,  Dongsu Jang

IPC: G11C27/00 ,  G11C5/14 ,  G11C7/10

Abstract: A non-volatile memory device includes a first and a second memory regions including first and second memory cells and first and second analog circuits, respectively; a control logic circuit determining on/off states of the analog circuits, and converting an external power supply voltage into an internal operating voltage for operation of each of the memory cells; and input/output circuit selecting an input/output memory region for performing input/output of data using the internal operating voltage, wherein input/output of data for the first and second memory cells are sequentially performed, and at least one of the each of the first and second analog circuits are turned on together while the input/output of data for the first memory cells is performed.

公开(公告)号：US12217802B2

公开(公告)日：2025-02-04

申请号：US17648311

申请日：2022-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooyong Park ,  Sangwon Park ,  Dongjin Shin ,  Suchang Jeon ,  Seungyong Choi

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/08 ,  G11C16/14 ,  G11C16/20

Abstract: A non-volatile memory device includes a meta area having a first region storing first initial data, and second regions storing second initial data, different from each other; a user area configured to store user data; an initialization register configured to store the first initial data or update the second initial data in whole or in part; and control logic configured to perform a read operation, a program operation, or an erase operation using the initial data stored in the initialization register.

公开(公告)号：US10381090B2

公开(公告)日：2019-08-13

申请号：US16003729

申请日：2018-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Chu Oh ,  Pilsang Yoon ,  Jun Jin Kong ,  Jisu Kim ,  Hong Rak Son ,  Jinbae Bang ,  Daeseok Byeon ,  Taehyun Song ,  Dongjin Shin ,  Dongsup Jin

IPC: G11C16/28 ,  G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/34 ,  G11C16/26 ,  G11C29/50 ,  G11C29/02

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.