Invention Grant
- Patent Title: Semiconductor device and manufacturing method therefor
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Application No.: US17765295Application Date: 2020-08-18
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Publication No.: US12230693B2Publication Date: 2025-02-18
- Inventor: Nailong He , Sen Zhang
- Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Applicant Address: CN Wuxi
- Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee Address: CN Wuxi
- Agency: Dority & Manning, P.A.
- Priority: CN201911395825.7 20191230
- International Application: PCT/CN2020/109721 WO 20200818
- International Announcement: WO2021/135262 WO 20210708
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/04 ; H01L21/762 ; H01L29/66 ; H01L29/78 ; H01L29/08
Abstract:
A semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a semiconductor substrate. A first drift region is formed in the semiconductor substrate. A gate structure is formed on the semiconductor substrate A part of the gate structure covers a part of the first drift region. A first trench is formed in the first drift region, and a drain region is formed in the semiconductor substrate at the bottom of the first trench.
Public/Granted literature
- US20220367682A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2022-11-17
Information query
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