- Patent Title: Magnetization rotational element, magnetoresistance effect element, semiconductor element, magnetic recording array, and method for manufacturing magnetoresistance effect element
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Application No.: US18232941Application Date: 2023-08-11
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Publication No.: US12290002B2Publication Date: 2025-04-29
- Inventor: Yugo Ishitani , Tomoyuki Sasaki , Yohei Shiokawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2019-212835 20191126,JP2020-173445 20201014
- Main IPC: H10N50/10
- IPC: H10N50/10 ; G11C11/16 ; H10B61/00 ; H10N50/01 ; H10N50/80 ; H10N50/85

Abstract:
A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.
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