Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US17660729Application Date: 2022-04-26
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Publication No.: US12294024B2Publication Date: 2025-05-06
- Inventor: Hajime Watakabe , Masashi Tsubuku , Kentaro Miura , Akihiro Hanada , Takaya Tamaru
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Agency: Maier & Maier, PLLC
- Priority: JP2021-080436 20210511
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/426 ; H01L21/4757 ; H01L21/4763 ; H01L29/40 ; H01L29/423 ; H01L29/786

Abstract:
According to one embodiment, a method of manufacturing a semiconductor device, includes forming a first insulating layer, an oxide semiconductor layer, a second insulating layer, a buffer layer and a metal layer sequentially on a base, forming a patterned resist on the metal layer, etching the buffer layer and the metal layer using the resist as a mask to expose an upper surface of the second insulating layer, reducing a volume of the resist to expose an upper surface along a side surface of the metal layer, etching the metal layer using the resist as a mask, to form a gate electrode and to expose an upper surface of the buffer layer, and carrying out ion implantation on the oxide semiconductor layer using the gate electrode as a mask.
Public/Granted literature
- US20220367691A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-11-17
Information query
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