公开(公告)号：US12119407B2

公开(公告)日：2024-10-15

申请号：US18163045

申请日：2023-02-01

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku ,  Michiaki Sakamoto ,  Takashi Okada ,  Toshiki Kaneko ,  Tatsuya Toda

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733

Abstract: A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.

公开(公告)号：US12010871B2

公开(公告)日：2024-06-11

申请号：US17199991

申请日：2021-03-12

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku ,  Tatsuya Toda

IPC: H10K59/121 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

CPC classification number: H10K59/1213 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/7869 ,  H01L27/1225 ,  H01L2029/42388

Abstract: A thin film transistor including: an active layer formed of an oxide semiconductor including at least indium and gallium; a gate electrode; a first gate insulating layer disposed between the active layer and the gate electrode on the gate electrode side; and a second gate insulating layer, which is a hydrogen block layer, disposed between the active layer and the gate electrode on the active layer side.

公开(公告)号：US20200381472A1

公开(公告)日：2020-12-03

申请号：US16999214

申请日：2020-08-21

Applicant: Japan Display Inc.

Inventor： Takanori TSUNASHIMA ,  Masashi Tsubuku ,  Makoto Uchida

IPC: H01L27/146 ,  H01L31/032 ,  H01L31/113

Abstract: According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.

公开(公告)号：US12287552B2

公开(公告)日：2025-04-29

申请号：US18508246

申请日：2023-11-14

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Masashi Tsubuku ,  Toshinari Sasaki ,  Takaya Tamaru

IPC: G02F1/1362 ,  G02F1/1368 ,  G06F3/044

Abstract: A display device includes a plurality of pixel electrodes each connected to a semiconductor device, a plurality of common electrodes each disposed opposite to a part of the plurality of pixel electrodes, and a plurality of common wirings each connected to the plurality of common electrodes. The semiconductor device includes an oxide semiconductor layer having a polycrystalline structure, and at least a part of each common wiring is composed of the oxide semiconductor layer. Each common electrode may be located across a plurality of pixel electrodes.

公开(公告)号：US12069925B2

公开(公告)日：2024-08-20

申请号：US17699250

申请日：2022-03-21

Applicant: Japan Display Inc.

Inventor： Hayata Aoki ,  Masashi Tsubuku ,  Toshinari Sasaki

IPC: H10K59/35 ,  G09F9/33 ,  H10K50/828

CPC classification number: H10K59/353 ,  H10K50/828 ,  G09F9/335

Abstract: According to one embodiment, a display device includes a first area including a pixel and a second area different from the first area, wherein the pixel includes a pixel electrode, an organic material layer including a light-emitting layer, a first common electrode, and a second common electrode having transmittance higher than that of the first insulating layer, the second area is an area not overlapping the light-emitting layer in plan view, the second area is a transparent area, and the second area does not comprise the first common electrode provided therein.

公开(公告)号：US11594641B2

公开(公告)日：2023-02-28

申请号：US17111810

申请日：2020-12-04

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku ,  Michiaki Sakamoto ,  Takashi Okada ,  Toshiki Kaneko ,  Tatsuya Toda

IPC: H01L29/00 ,  H01L29/786 ,  H01L29/417

Abstract: A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.

公开(公告)号：US11189745B2

公开(公告)日：2021-11-30

申请号：US17024725

申请日：2020-09-18

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku ,  Takanori Tsunashima ,  Marina Mochizuki

IPC: H01L27/14 ,  H01L31/12 ,  G06F1/16 ,  H01L31/101

Abstract: The problem of the present disclosure is to provide a photo sensor circuit that uses oxide semiconductor transistors and the operation of which is stable. The photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. Each of the photo transistor, the first switching transistor, and the second transistor includes an oxide semiconductor layer as a channel layer.

公开(公告)号：US12191398B2

公开(公告)日：2025-01-07

申请号：US17579740

申请日：2022-01-20

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Masashi Tsubuku

IPC: H01L29/78 ,  H01L29/786

Abstract: The purpose of the present invention is to suppress a variation in a threshold voltage (Δ Vth) in a Thin Film Transistor (TFT) using an oxide semiconductor. The present invention takes a structure as follows to attain this purpose. A semiconductor device having TFT using an oxide semiconductor including: a channel region, a source region, a drain region, and a transition region between the channel region and the source region and between the channel region and the drain region, in which a resistivity of the transition region is smaller than that of the channel region, and larger than that of the source region or the drain region; a source electrode is formed overlapping the source region, and a drain electrode is formed overlapping the drain region; and a thickness of the transition region of the oxide semiconductor is larger than a thickness of the channel region of the oxide semiconductor.

公开(公告)号：US12176438B2

公开(公告)日：2024-12-24

申请号：US17549882

申请日：2021-12-14

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Kentaro Miura ,  Toshinari Sasaki ,  Takeshi Sakai ,  Akihiro Hanada ,  Masashi Tsubuku

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/786

Abstract: According to one embodiment, a semiconductor device includes an oxide semiconductor. The oxide semiconductor includes a first edge portion and a second edge portion intersecting a gate electrode, a first area overlapping the gate electrode, a second area along the first edge portion, a third area along the second edge portion, a fourth area the first edge portion, a fifth area along the second edge portion, a sixth area surrounded by the first area, the second area and the third area, and a seventh area surrounded by the first area, the fourth area and the fifth area. The first area, the second area and the third area, the fourth area and the fifth area have a higher resistivity than those of the sixth area and the seventh area.

公开(公告)号：US12094980B2

公开(公告)日：2024-09-17

申请号：US17483836

申请日：2021-09-24

Applicant: Japan Display Inc.

Inventor： Tatsuya Toda ,  Masashi Tsubuku ,  Toshinari Sasaki

IPC: H01L27/12 ,  G01N23/20091 ,  H01L29/786

CPC classification number: H01L29/7869 ,  G01N23/20091 ,  H01L27/1225 ,  H01J2237/2442

Abstract: A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.