Invention Application
US20020185589A1 CMOS photodetector including an amorphous silicon photodiode 有权
CMOS光电探测器包括非晶硅光电二极管

  • Patent Title: CMOS photodetector including an amorphous silicon photodiode
  • Patent Title (中): CMOS光电探测器包括非晶硅光电二极管
  • Application No.: US10142262
    Application Date: 2002-05-08
  • Publication No.: US20020185589A1
    Publication Date: 2002-12-12
  • Inventor: Yvon Cazaux
  • Applicant: STMicroelectronics S.A.
  • Applicant Address: FR Montrouge
  • Assignee: STMicroelectronics S.A.
  • Current Assignee: STMicroelectronics S.A.
  • Current Assignee Address: FR Montrouge
  • Priority: FR01/06131 20010509
  • Main IPC: H01L031/00
  • IPC: H01L031/00
CMOS photodetector including an amorphous silicon photodiode
Abstract:
A photodetector including an amorphous silicon photodiode having its anode connected to a reference voltage, an initialization MOS transistor connected between the cathode of the photodiode and a first supply voltage to set the cathode to the first supply voltage during an initialization phase, and means for measuring the voltage of the photodiode cathode, including saturation means for bringing the photodiode cathode to a saturation voltage close to the reference voltage immediately before the initialization phase.
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