CMOS photodetector including an amorphous silicon photodiode
    1.
    发明申请
    CMOS photodetector including an amorphous silicon photodiode 有权
    CMOS光电探测器包括非晶硅光电二极管

    公开(公告)号:US20020185589A1

    公开(公告)日:2002-12-12

    申请号:US10142262

    申请日:2002-05-08

    Inventor: Yvon Cazaux

    Abstract: A photodetector including an amorphous silicon photodiode having its anode connected to a reference voltage, an initialization MOS transistor connected between the cathode of the photodiode and a first supply voltage to set the cathode to the first supply voltage during an initialization phase, and means for measuring the voltage of the photodiode cathode, including saturation means for bringing the photodiode cathode to a saturation voltage close to the reference voltage immediately before the initialization phase.

    Abstract translation: 一种光电检测器,包括其阳极连接到参考电压的非晶硅光电二极管,连接在光电二极管的阴极之间的初始化MOS晶体管和在初始化阶段期间将阴极设置为第一电源电压的第一电源电压,以及用于测量 包括光电二极管阴极的电压,包括用于在初始化阶段之前使光电二极管阴极达到接近参考电压的饱和电压的饱和装置。

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