发明申请
US20040129942A1 Inverted buried strap structure and method for vertical transistor DRAM
失效
垂直晶体管DRAM的反埋埋式结构和方法
- 专利标题： Inverted buried strap structure and method for vertical transistor DRAM
- 专利标题（中）： 垂直晶体管DRAM的反埋埋式结构和方法
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申请号： US10337014申请日： 2003-01-03
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公开(公告)号： US20040129942A1公开(公告)日： 2004-07-08
- 发明人: Ramachandra Divakaruni , Thomas W. Dyer
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： NY ARMONK
- 主分类号： H01L027/108
- IPC分类号： H01L027/108 ; H01L029/04 ; H01L029/76 ; H01L029/94 ; H01L031/036
摘要：
A simple method of forming the buried strap in a trench DRAM sets the separation between the buried strap and the vertical transistor channel by control of the overetch in forming a recess of the buried strap material, instead of setting the separation by the thickness of the trench top oxide.
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