发明申请
- 专利标题： Method for defining a source and a drain and a gap inbetween
- 专利标题（中）： 用于定义源和漏极之间的间隙的方法
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申请号： US10497926申请日： 2002-11-25
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公开(公告)号： US20050003590A1公开(公告)日： 2005-01-06
- 发明人: Martin Blees , Marcel Boehmer
- 申请人： Martin Blees , Marcel Boehmer
- 优先权： EP01204703.1 20011206
- 国际申请： PCT/IB02/05036 WO 20021125
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; C23C18/16 ; H01L21/285 ; H01L21/288 ; H01L21/336 ; H01L29/417 ; H01L29/45 ; H01L29/786 ; H01L51/05 ; H01L21/00 ; H01L21/44 ; H01L21/84
摘要：
A method for creating a source and a drain of a thin film transistor is disclosed. The method comprises the step (106) of forming a mask of a monolayer on a substrate. The mask will be used for selective electroless deposition of a metal layer (108). Thus, a metal layer could be grown in the areas where no monolayer is present. As a result, the grown metal layer could form a source and a drain with a gap in-between, where the monolayer has prevented deposition.
公开/授权文献
- US1922687A Shock absorbing socket 公开/授权日：1933-08-15