发明申请
US20050006225A1 Apparatus and method to deposit magnesium oxide film on a large area 失效
在大面积上沉积氧化镁薄膜的方法和装置

  • 专利标题: Apparatus and method to deposit magnesium oxide film on a large area
  • 专利标题(中): 在大面积上沉积氧化镁薄膜的方法和装置
  • 申请号: US10811946
    申请日: 2004-03-30
  • 公开(公告)号: US20050006225A1
    公开(公告)日: 2005-01-13
  • 发明人: Young ChoiJee Kim
  • 申请人: Young ChoiJee Kim
  • 优先权: KRKR10-2003-46154 20030708
  • 主分类号: H01J9/20
  • IPC分类号: H01J9/20 C23C14/08 C23C14/35 B05D5/12 C23C14/00
Apparatus and method to deposit magnesium oxide film on a large area
摘要:
An apparatus and method to deposit a MgO film on a large substrate area. The method includes applying a voltage to one or more magnesium targets; applying an electric current to the one or more magnesium targets when the voltage stops increasing so that a power with a negative square wave, which does not cause mutual interfere, is applied to the one or more magnesium targets; and forming a MgO film on a substrate using magnesium particles emitted from the one or more magnesium targets by the power applied. The disclosed apparatus to deposit a MgO film on a large substrate area includes a magnetron part having at least one magnesium target and a permanent magnet; a power control part to apply power to the at least one magnesium target and separately provide control for each of the at least one magnesium target; a flow control part to supply gases for the at least one magnesium target; a substrate control part to control a substrate; a vacuum control part to control a vacuum state in a chamber; and a heater control part to maintain temperature in the chamber.
信息查询
0/0