发明申请
- 专利标题: DRAM BURIED STRAP PROCESS WITH SILICON CARBIDE
- 专利标题(中): 具有碳化硅的DRAM烧结带工艺
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申请号: US10604488申请日: 2003-07-25
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公开(公告)号: US20050017282A1公开(公告)日: 2005-01-27
- 发明人: David Dobuzinsky , Jonathan Faltermeier , Philip Flaitz , Rajarao Jammy , Yuko Ninomiya , Ravikumar Ramachandran , Viraj Sardesai , Yun Wang
- 申请人: David Dobuzinsky , Jonathan Faltermeier , Philip Flaitz , Rajarao Jammy , Yuko Ninomiya , Ravikumar Ramachandran , Viraj Sardesai , Yun Wang
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/334
- IPC分类号: H01L21/334 ; H01L21/8242 ; H01L27/108
摘要:
In the process of forming a trench capacitor, the conductive strap connecting the center electrode of the capacitor with a circuit element in the substrate, such as the pass transistor of a DRAM cell, is separated from the crystalline substrate material by a barrier layer of silicon carbide formed during the process of etching the material within the trench, such as an oxide collar, using a reactive ion etch process with an etchant gas that contains carbon, such as C4F8.