公开(公告)号：US20050017282A1

公开(公告)日：2005-01-27

申请号：US10604488

申请日：2003-07-25

申请人： David Dobuzinsky ,  Jonathan Faltermeier ,  Philip Flaitz ,  Rajarao Jammy ,  Yuko Ninomiya ,  Ravikumar Ramachandran ,  Viraj Sardesai ,  Yun Wang

发明人： David Dobuzinsky ,  Jonathan Faltermeier ,  Philip Flaitz ,  Rajarao Jammy ,  Yuko Ninomiya ,  Ravikumar Ramachandran ,  Viraj Sardesai ,  Yun Wang

IPC分类号： H01L21/334 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10867 ,  H01L27/10829 ,  H01L29/66181

摘要： In the process of forming a trench capacitor, the conductive strap connecting the center electrode of the capacitor with a circuit element in the substrate, such as the pass transistor of a DRAM cell, is separated from the crystalline substrate material by a barrier layer of silicon carbide formed during the process of etching the material within the trench, such as an oxide collar, using a reactive ion etch process with an etchant gas that contains carbon, such as C4F8.

摘要翻译： 在形成沟槽电容器的过程中，将电容器的中心电极与衬底中的电路元件（例如DRAM单元的传输晶体管）连接的导电带通过硅的阻挡层与晶体衬底材料分离 在蚀刻沟槽内的材料（例如氧化物环）的过程中形成的碳化物，其使用具有包含碳的蚀刻剂气体如C4F8的反应离子蚀刻工艺。

公开(公告)号：US06534133B1

公开(公告)日：2003-03-18

申请号：US09607900

申请日：2000-06-30

申请人： Alain E. Kaloyeros ,  Andres Knorr ,  Jonathan Faltermeier

发明人： Alain E. Kaloyeros ,  Andres Knorr ,  Jonathan Faltermeier

IPC分类号： C23C1620

CPC分类号： H01L21/32051 ,  C23C16/0272 ,  C23C16/18 ,  C23C16/4412 ,  C23C16/5096 ,  H01L21/76877

摘要： A chemical vapor deposition process for the in-situ preparation of conformal copper-doped aluminum coatings on a substrate comprises the steps of generating a first flow of a first reactant vapor directed to the substrate in the reactor, the first reactant vapor including a copper source precursor; heating the substrate to a temperature sufficient to decompose the first reactant vapor and form an ultrathin copper seed layer; generating a second flow of a second reactant vapor directed to the substrate in the reactor, the second reactant vapor including an aluminum source precursor; and heating the substrate to a temperature higher than 185° C. to decompose the second reactant vapor and form a copper-doped aluminum film.

摘要翻译： 用于在基底上原位制备共形铜掺杂的铝涂层的化学气相沉积方法包括以下步骤：产生在反应器中引导到基底的第一反应物蒸气的第一流，第一反应物蒸气包括铜源 前体 将基底加热到足以分解第一反应物蒸气并形成超薄铜籽晶层的温度; 在所述反应器中产生指向所述衬底的第二反应物蒸气的第二流，所述第二反应物蒸汽包括铝源前体; 并将衬底加热至高于185℃的温度，以分解第二反应物蒸气并形成掺铜的铝膜。

公开(公告)号：US6077571A

公开(公告)日：2000-06-20

申请号：US574943

申请日：1995-12-19

申请人： Alain E. Kaloyeros ,  Jonathan Faltermeier

发明人： Alain E. Kaloyeros ,  Jonathan Faltermeier

IPC分类号： C23C14/16 ,  C23C16/18 ,  C23C16/20 ,  C23C16/50 ,  C23C16/505 ,  C23C16/507 ,  C23C16/511 ,  H01L21/285 ,  C23G16/20

CPC分类号： C23C14/16 ,  C23C16/18 ,  C23C16/20 ,  C23C16/50 ,  C23C16/505 ,  C23C16/507 ,  C23C16/511 ,  H01L21/28556

摘要： The present invention relates to a process and apparatus for the formation of conformal pure aluminum and doped aluminum coatings on a patterned substrate. It is directed to the use of low temperature thermal and plasma-promoted chemical vapor deposition techniques with biased substrate to provide conformal layers and bilayers comprised of pure Al and/or doped Al (e.g., Al with 0.5 at % copper) on semiconductor device substrates with patterned holes, vias, and trenches with aggressive aspect ratios (hole depth/hole width ratios). The use of the plasma-promoted CVD (PPCVD) process, which employs low plasma power densities, allows the growth of aluminum films with the smooth surface morphology and small grain size necessary for ULSI applications, while substrate bias provides superior coverage and complete aluminum fill of features intrinsic in microelectronic device manufacture. Aluminum doping is achieved by in-situ deposition by PPCVD of sequential bilayers of Al and Cu followed by in-situ annealing, or in-situ simultaneous PPCVD deposition of copper-doped aluminum.

摘要翻译： 本发明涉及一种用于在图案化衬底上形成共形纯铝和掺杂铝涂层的方法和装置。 它旨在使用具有偏置衬底的低温热和等离子体促进的化学气相沉积技术来提供由半导体器件衬底上的纯Al和/或掺杂Al（例如，具有0.5at％的铜）的Al构成的保形层和双层 具有图案化的孔，通孔和具有侵蚀性纵横比（孔深度/孔宽比）的沟槽。 使用采用低等离子体功率密度的等离子体促进CVD（PPCVD）工艺允许具有ULSI应用所需的光滑表面形态和小晶粒尺寸的铝膜的生长，而衬底偏压提供优异的覆盖和完全的铝填充 的微电子器件制造中固有的特征。 铝掺杂通过PPCVD原位沉积通过Al和Cu的顺序双层进行原位沉积，然后进行原位退火或原位同时PPCVD沉积铜掺杂的铝来实现。