发明申请
- 专利标题： PRECISE PATTERNING OF HIGH-K FILMS
- 专利标题（中）： 精密图案的高K片
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申请号： US10632470申请日： 2003-08-01
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公开(公告)号： US20050026451A1公开(公告)日： 2005-02-03
- 发明人: Justin Brask , Mark Doczy , Matthew Metz , John Barnak , Paul Markworth
- 申请人： Justin Brask , Mark Doczy , Matthew Metz , John Barnak , Paul Markworth
- 主分类号： H01L21/3063
- IPC分类号： H01L21/3063 ; H01L21/28 ; H01L21/311 ; H01L21/302 ; H01L21/461
摘要：
A high-K thin film patterning solution is disclosed to address structural and process limitations of conventional patterning techniques. Subsequent to formation of gate structures adjacent a high-K dielectric layer, a portion of the high-K dielectric layer material is reduced, preferably via exposure to hydrogen gas, to form a reduced portion of the high-K dielectric layer. The reduced portion may be selectively removed utilizing wet etch chemistries to leave behind a trench of desirable geometric properties.
公开/授权文献
- US06855639B1 Precise patterning of high-K films 公开/授权日：2005-02-15
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