发明申请
- 专利标题: Formation of ultra-thin oxide layers by self-limiting interfacial oxidation
- 专利标题(中): 通过自限界面氧化形成超薄氧化层
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申请号: US10630969申请日: 2003-07-31
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公开(公告)号: US20050026453A1公开(公告)日: 2005-02-03
- 发明人: David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
- 申请人: David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
- 申请人地址: JP Tokyo US NY Armonk
- 专利权人: Tokyo Electron Limited,International Business Machines Corporation
- 当前专利权人: Tokyo Electron Limited,International Business Machines Corporation
- 当前专利权人地址: JP Tokyo US NY Armonk
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L21/314 ; H01L21/316 ; H01L29/51 ; H01L21/31
摘要:
Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.