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    Wafer heater assembly
    5.
    发明申请
    Wafer heater assembly 审中-公开
    晶圆加热器总成

    公开(公告)号：US20050217799A1

    公开(公告)日：2005-10-06

    申请号：US10813119

    申请日：2004-03-31

    申请人： David O'Meara ,  Gerrit Leusink ,  Stephen Cabral ,  Anthony Dip ,  Cory Wajda ,  Raymond Joe

    发明人： David O'Meara ,  Gerrit Leusink ,  Stephen Cabral ,  Anthony Dip ,  Cory Wajda ,  Raymond Joe

    IPC分类号： C23F1/00 ,  H01L21/00

    CPC分类号： H01L21/67109 ,  H01J2237/2001

    摘要： A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon ‘wire’ or ‘braided’ structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.

    摘要翻译： 描述了具有用于单个晶片处理系统的唯一加热器元件的晶片加热组件。 加热单元包括封装在石英鞘中的碳线元件。 加热单元与石英无污染，允许直接接触晶片。 碳线或“编织”结构的机械灵活性允许线圈构造，其允许跨晶片的独立加热器区域控制。 跨晶片的多个独立的加热器区域可以允许温度梯度调节膜生长/沉积均匀性和快速的热调节，其膜均匀性优于常规单晶片系统，并且最小至无晶片翘曲。 低热质量允许快速的热响应，其实现脉冲或数字热处理，其导致逐层成膜以改善薄膜控制。

    Formation of a metal-containing film by sequential gas exposure in a batch type processing system
    6.
    发明申请
    Formation of a metal-containing film by sequential gas exposure in a batch type processing system 审中-公开
    在间歇式处理系统中通过连续气体暴露形成含金属膜

    公开(公告)号：US20050056219A1

    公开(公告)日：2005-03-17

    申请号：US10662522

    申请日：2003-09-16

    申请人： Anthony Dip ,  Michael Toeller ,  Kimberly Reid

    发明人： Anthony Dip ,  Michael Toeller ,  Kimberly Reid

    IPC分类号： C23C16/00 ,  C23C16/30 ,  C23C16/40 ,  H01L20060101

    CPC分类号： C23C16/45531 ,  C23C16/308 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45546

    摘要： A method is provided for forming a metal-containing film on a substrate by a sequential gas exposure process in a batch type processing system. A metal-containing film can be formed on a substrate by providing a substrate in a process chamber of a batch type processing system, heating the substrate, sequentially flowing a pulse of a metal-containing precursor gas and a pulse of a reactant gas in the process chamber, and repeating the flowing processes until a metal-containing film with desired film properties is formed on the substrate. The method can form a metal-oxide film, for example HfO2 and ZrO2, a metal-oxynitride film, for example HfxOzNw, and HfxOzNw, a metal-silicate film, for example HfxSiyOz and ZrxSiyOz, and a nitrogen-containing metal-silicate film, for example HfxSiyOzNw and ZrxSiyOzNw. A processing tool containing a batch type processing system for forming a metal-containing film by a sequential gas exposure process is provided.

    摘要翻译： 提供了一种通过在间歇式处理系统中通过连续气体曝光工艺在基板上形成含金属膜的方法。 通过在间歇式处理系统的处理室中设置基板，在衬底上形成含金属膜，加热衬底，顺序地将含金属的前体气体的脉冲和反应气体的脉冲流入 并且重复流动过程，直到在基底上形成具有所需膜特性的含金属膜。 该方法可以形成金属氧化物膜，例如HfO 2和ZrO 2，金属 - 氮氧化物膜，例如Hf x O z N w和Hf x O z N w，金属硅酸盐膜，例如Hf x Sb y O z和Zr x S y O z，以及含氮金属硅酸盐膜 ，例如HfxSiyOzNw和ZrxSiyOzNw。 提供了一种包含用于通过连续气体曝光工艺形成含金属膜的间歇式处理系统的加工工具。

    IN-SITU ATOMIC LAYER DEPOSITION
    7.
    发明申请
    IN-SITU ATOMIC LAYER DEPOSITION 审中-公开
    现场原子层沉积

    公开(公告)号：US20070037412A1

    公开(公告)日：2007-02-15

    申请号：US11462234

    申请日：2006-08-03

    申请人： Anthony Dip ,  Sadao Sasaki ,  Michael Toeller ,  Kimberly Reid

    发明人： Anthony Dip ,  Sadao Sasaki ,  Michael Toeller ,  Kimberly Reid

    IPC分类号： H01L21/31

    CPC分类号： H01L21/0228 ,  C23C16/0236 ,  C23C16/405 ,  C23C16/45546 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/02205 ,  H01L21/02312 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31645

    摘要： An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system. The method comprises first loading a plurality of wafers into a process chamber, and then pre-treating the plurality of wafers in the process chamber with a first oxidizer. After pre-treating the wafers, and without removing the wafers from the process chamber, the method then comprises depositing HfO2 on the plurality of wafers by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).

    摘要翻译： 在间歇晶片处理系统中形成HfO 2高k电介质层的原位方法。 该方法包括首先将多个晶片加载到处理室中，然后用第一氧化器预处理处理室中的多个晶片。 在预处理晶片之后，并且不从处理室移除晶片，该方法然后包括通过原子层沉积在多个晶片上沉积HfO 2，其包括多个沉积循环，每个沉积循环 循环，包括将处理室中的多个晶片交替暴露于第二氧化剂和铪前体。 铪前体选自叔丁醇铪（HTB）或四乙基铪铪（TDEAH）。

    REDUCED DEFECT SILICON OR SILICON GERMANIUM DEPOSITION IN MICRO-FEATURES
    8.
    发明申请
    REDUCED DEFECT SILICON OR SILICON GERMANIUM DEPOSITION IN MICRO-FEATURES 有权
    在微特征中减少缺陷硅或硅锗沉积

    公开(公告)号：US20080169534A1

    公开(公告)日：2008-07-17

    申请号：US11622204

    申请日：2007-01-11

    申请人： Anthony Dip ,  John Gumpher ,  Allen John Leith ,  Seungho Oh

    发明人： Anthony Dip ,  John Gumpher ,  Allen John Leith ,  Seungho Oh

    IPC分类号： H01L21/36 ,  H01L29/06

    CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0262 ,  H01L21/02639

    摘要： A method is provided for reduced defect such as void free or reduced void Si or SiGe deposition in a micro-feature on a patterned substrate. The micro-feature includes a sidewall and the patterned substrate contains an isolation layer on the field area and on the sidewall and bottom of the micro-feature. The method includes forming a Si or SiGe seed layer at the bottom of the micro-feature, and at least partially filling the micro-feature from the bottom up by selectively growing Si or SiGe onto the Si or SiGe seed layer. According to one embodiment, the Si or SiGe seed layer is formed by depositing a conformal Si or SiGe layer onto the patterned substrate, removing the Si or SiGe layer from the field area, heat treating the Si or SiGe layer in the presence of H2 gas to transfer at least a portion of the Si or SiGe layer from the sidewall to the bottom of the micro-feature, and etching Si or SiGe residue from the field area and the sidewall.

    摘要翻译： 提供了一种减少缺陷的方法，例如在图案化衬底上的微特征中的无空隙或减少的空隙Si或SiGe沉积。 微型特征包括侧壁，并且图案化衬底在场区域和微特征的侧壁和底部上包含隔离层。 该方法包括在微特征的底部形成Si或SiGe种子层，并且通过在Si或SiGe种子层上选择性地生长Si或SiGe，从底部至少部分地填充微特征。 根据一个实施例，Si或SiGe种子层通过将沉积的Si或SiGe层沉积在图案化的衬底上，从场区去除Si或SiGe层而形成，在H区存在下热处理Si或SiGe层， 从而将Si或SiGe层的至少一部分从侧壁传递到微特征的底部，并且从场区域和侧壁蚀刻Si或SiGe残留物。

    IN-SITU FORMATION OF OXIDIZED ALUMINUM NITRIDE FILMS
    9.
    发明申请
    IN-SITU FORMATION OF OXIDIZED ALUMINUM NITRIDE FILMS 有权
    氧化氮化铝膜的现场形成

    公开(公告)号：US20070259534A1

    公开(公告)日：2007-11-08

    申请号：US11745278

    申请日：2007-05-07

    申请人： Kimberly G. Reid ,  Anthony Dip

    发明人： Kimberly G. Reid ,  Anthony Dip

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： C23C16/303 ,  C23C16/56

    摘要： A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber, depositing an AlN film on the substrate, and post-treating the AlN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AlN film with substantially no increase in the AlN film thickness. The method can also include pre-treating the substrate prior to AlN deposition, post-annealing the AlN film before or after the post-treatment, or both.

    摘要翻译： 提供了一种在衬底上原位形成薄的氧化AlN膜的方法。 该方法包括在处理室中提供衬底，在衬底上沉积AlN膜，以及暴露于含氮和含氧气体后对AlN膜进行后处理。 后处理增加了AlN膜的介电常数，而AlN膜厚度基本上没有增加。 该方法还可以包括在AlN沉积之前预处理衬底，在后处理之前或之后对AlN膜进行后退火，或者两者。