发明申请
- 专利标题： Method of forming uniform ultra-thin oxynitride layers
- 专利标题（中）： 形成均匀的超薄氧氮化物层的方法
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申请号： US10630970申请日： 2003-07-31
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公开(公告)号： US20050026459A1公开(公告)日： 2005-02-03
- 发明人: David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
- 申请人： David O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
- 申请人地址： JP Tokyo US NY Armonk
- 专利权人： Tokyo Electron Limited,International Business Machines Corporation
- 当前专利权人： Tokyo Electron Limited,International Business Machines Corporation
- 当前专利权人地址： JP Tokyo US NY Armonk
- 主分类号： C23C16/30
- IPC分类号： C23C16/30 ; H01L21/00 ; H01L21/28 ; H01L21/314 ; H01L21/316 ; H01L29/51 ; H01L21/31 ; H01L21/469
摘要：
Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.
公开/授权文献
- US07202186B2 Method of forming uniform ultra-thin oxynitride layers 公开/授权日：2007-04-10