发明申请
- 专利标题： Vacuum-cavity MEMS resonator
- 专利标题（中）： 真空腔MEMS谐振器
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申请号： US10921383申请日： 2004-08-19
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公开(公告)号： US20050036269A1公开(公告)日： 2005-02-17
- 发明人: Qing Ma , Peng Cheng , Valluri Rao
- 申请人： Qing Ma , Peng Cheng , Valluri Rao
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 主分类号： B81B7/00
- IPC分类号： B81B7/00 ; H03H3/007 ; H03H9/10 ; H03H9/24 ; H01G4/00
摘要：
A microelectromechanical (MEMS) resonator with a vacuum-cavity is fabricated using polysilicon-enabled release methods. A vacuum-cavity surrounding the MEMS beam is formed by removing release material that surrounds the beam and sealing the resulting cavity under vacuum by depositing a layer of nitride over the structure. The vacuum-cavity MEMS resonators have cantilever beams, bridge beams or breathing-bar beams.
公开/授权文献
- US07002436B2 Vacuum-cavity MEMS resonator 公开/授权日：2006-02-21
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