发明申请
- 专利标题: Magneto-resistive effect element and magnetic memory
- 专利标题(中): 磁阻效应元件和磁存储器
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申请号: US10886547申请日: 2004-07-09
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公开(公告)号: US20050041456A1公开(公告)日: 2005-02-24
- 发明人: Yoshiaki Saito
- 申请人: Yoshiaki Saito
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2003-194513 20030709
- 主分类号: G11C11/15
- IPC分类号: G11C11/15 ; G11C11/16 ; G11C11/22 ; H01F10/14 ; H01F10/16 ; H01F10/32 ; H01L21/8246 ; H01L27/105 ; H01L43/08 ; H01L43/10
摘要:
It is possible to obtain excellent heat stability even though the element is miniaturized and keep stable magnetic domains even though switching is repeated any number of times. A magneto-resistive effect element includes: a magnetization-pinned layer including a magnetic film having a spin moment oriented in a direction perpendicular to a film surface thereof and pinned in the direction; a magnetic recording layer having a spin moment oriented in a direction perpendicular to a film surface thereof; a nonmagnetic layer formed between the magnetization-pinned layer and the magnetic recording layer; and an anti-ferromagnetic film formed on at least side surfaces of the magnetization-pinned layer.
公开/授权文献
- US07307302B2 Magneto-resistive effect element and magnetic memory 公开/授权日:2007-12-11
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